The role of point defects generated in the crystalline region in ion beam induced epitaxial crystallization of silicon
- 1 January 1996
- journal article
- Published by Taylor & Francis in Radiation Effects and Defects in Solids
- Vol. 139 (3) , 189-195
- https://doi.org/10.1080/10420159608211546
Abstract
Ion beam induced epitaxial crystallization of the outer part of a buried amorphous silicon layer is studied following defect generation into the near-surface crystalline region by 2.5 keV Ar+ ion bombardment. It is shown that mobile defects generated as far as 10 nm at least from the amorphous-crystalline interface effectively stimulate crystallization.Keywords
This publication has 23 references indexed in Scilit:
- New model of ion-induced crystallization and amorphization of siliconApplied Physics Letters, 1994
- Ion-beam-induced epitaxial crystallization and amorphization in siliconMaterials Science Reports, 1990
- Phenomenological description of ion-beam-induced epitaxial crystallization of amorphous siliconPhysical Review B, 1990
- Ion-assisted recrystallization of amorphous siliconApplied Surface Science, 1989
- A Critical Discussion of the Vacancy Diffusion Model of Ion Beam Induced Epitaxial CrystallizationPhysica Status Solidi (a), 1989
- A defect model for ion-induced crystallization and amorphizationJournal of Materials Research, 1988
- Amorphization of Silicon by Ion Irradiation: The Role of the DivacancyMRS Proceedings, 1988
- Ion-beam-induced crystallization and amorphization of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous SiliconPhysical Review Letters, 1985
- Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy depositionPhysical Review B, 1985