New model of ion-induced crystallization and amorphization of silicon
- 21 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (8) , 1000-1002
- https://doi.org/10.1063/1.110951
Abstract
A new model for ion‐induced crystallization and amorphization at the interface is presented. The model is based on the general concept for ion‐induced processes between two solid phases with different free energies; the presence of pure ballistic and thermally enhanced processes. The parameters that can fit quantitatively to the temperature, flux, and stopping power dependencies of crystallization/amorphization rates for Si are obtained.Keywords
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