Growth-site-limited crystallization of amorphous silicon
- 3 August 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 69 (5) , 780-783
- https://doi.org/10.1103/physrevlett.69.780
Abstract
The ion-beam-induced epitaxial crystallization rate of amorphous Si was measured by time-resolved reflectivity on crystal substrates with orientations every 5° from (100) to (111) to (011). The measurements show that the (011) regrows 3% slower than the (100), and the regrowth rate steadily decreases with increasing misorientation towards the (111). These data can be explained using a growth-site-limited model wherein a beam-induced defect flux to the interface results in a growth-rate dependent on the interfacial bonding configuration.Keywords
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