Growth of InGaAs multi-quantum wells at 1.3 μm wavelength on GaAs compliant substrates

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Abstract
InGaAs multiple quantum wells at 1.3 μm wavelength have been grown on a twist-bonded GaAs compliant substrate. The GaAs compliant substrate contains a 30 Å GaAs thin layer bonded to a GaAs bulk substrate with a 22-degree angle. Nomarski phase contrast microscopy, transmission electron microscopy (TEM), and photoluminescence were used to characterize the heteroepitaxial layers. The smooth and crosshatch-free surface morphology, dislocation-free cross-sectional TEM, and strong luminescence intensity all provide convincing evidences for substantial improvement of the quality of heteroepitaxial material using the compliant substrate technique. Research is underway to apply the concept and technique of compliant substrate to Si and other materials.