Self-organization of nanostructures on Si wafers using surface structure control
- 1 October 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 386 (1-3) , 137-148
- https://doi.org/10.1016/s0039-6028(97)00311-7
Abstract
No abstract availableThis publication has 36 references indexed in Scilit:
- Microstructure fabrication using oxidation on partially Ga-terminated Si(111) surfacesApplied Physics Letters, 1996
- Dynamical Step Edge Stiffness on the Si(111) SurfacePhysical Review Letters, 1996
- Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) SurfacesJapanese Journal of Applied Physics, 1995
- Ge island formation on Si(111) in solid phase epitaxy studied by medium-energy ion scatteringJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self-organized on GaAs (311)B substratesApplied Physics Letters, 1994
- Transient step bunching on a vicinal Si(111) surfacePhysical Review Letters, 1994
- Scanning tunneling microscope tip–sample interactions: Atomic modification of Si and nanometer Si Schottky diodesJournal of Vacuum Science & Technology A, 1993
- High-temperature scanning-tunneling-microscopy observation of phase transitions and reconstruction on a vicinal Si(111) surfacePhysical Review B, 1993
- Step-height mixtures on vicinal Si(111) surfacesPhysical Review Letters, 1992
- Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HFApplied Physics Letters, 1991