Heavily carbon-doped GaAsSb grown on InP for HBT applications
- 31 December 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 221 (1-4) , 59-65
- https://doi.org/10.1016/s0022-0248(00)00649-7
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistorsApplied Physics Letters, 1999
- Mechanism of carbon incorporation from carbon tetrabromide in GaAs grown by metalorganic chemical vapor depositionJournal of Crystal Growth, 1997
- Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistorsApplied Physics Letters, 1996
- InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor depositionApplied Physics Letters, 1996
- Carbon incorporation in InGaAs grown on (311)A oriented substrates by metalorganic chemical vapor depositionJournal of Crystal Growth, 1996
- Radiative states in type-II GaSb/GaAs quantum wellsPhysical Review B, 1995
- Growth of carbon-doped p-type InxGa1−xAs (0<x≤0.53) by metalorganic chemical vapor depositionApplied Physics Letters, 1992
- Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5Journal of Electronic Materials, 1986
- Alloy scattering in ternary III-V compoundsPhysical Review B, 1976