Mechanism of carbon incorporation from carbon tetrabromide in GaAs grown by metalorganic chemical vapor deposition
- 1 July 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 178 (3) , 213-219
- https://doi.org/10.1016/s0022-0248(96)01176-1
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Mechanism of carbon incorporation into GaAs studied using isotopically labeled trimethylarsineJournal of Crystal Growth, 1997
- Carbon incorporation in InGaAs grown on (311)A oriented substrates by metalorganic chemical vapor depositionJournal of Crystal Growth, 1996
- Carbon doping in GaAs using trimethylarsine by metalorganic chemical vapor deposition with high-speed rotating susceptorJournal of Crystal Growth, 1995
- Heavy carbon doping in low-pressure metalorganic vapor phase epitaxy of GaAs using trimethylarsenic — a comparison between the carrier gases N2 and H2Journal of Crystal Growth, 1994
- Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 1994
- A new model for carbon doping in GaAs — effect of the methyl radicalJournal of Crystal Growth, 1994
- Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 − y, TMG and AsH3Journal of Crystal Growth, 1991
- Metallic p-type GaAs and InGaAs grown by MOMBEJournal of Crystal Growth, 1990
- Complex flow phenomena in MOCVD reactorsJournal of Crystal Growth, 1986
- Se Doping Mechanisms in MOCVD GaAs LayersJapanese Journal of Applied Physics, 1985