Se Doping Mechanisms in MOCVD GaAs Layers
- 1 October 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (10A) , L815
- https://doi.org/10.1143/jjap.24.l815
Abstract
A model of the Se incorporation mechanism into MOCVD GaAs layers is discussed in terms of the competitive surface adsorption process between Se and As atoms. According to the model, the doping level is determined by [H2Se]/[AsH3] but is independent of [TMG]. The validity of the model is experimentally confirmed from the dependence of the doping level on H2Se, AsH3, and TMG concentrations. In addition, the model explains why Se dopant atoms are not accumulated at the interface when growth is suspended.Keywords
This publication has 8 references indexed in Scilit:
- Free Carrier Profile Synthesis in MOCVD Grown GaAs by `Atomic-Plane' DopingJapanese Journal of Applied Physics, 1984
- Etude du dopage de l'arséniure de gallium par la technique d'épitaxie en phase vapeur aux organométalliquesRevue de Physique Appliquée, 1982
- Characterization of organometallic VPE grown GaAs and AlGaAs for solar cell applicationsJournal of Crystal Growth, 1981
- Luminescence of AlxGa1−xAs grown by MOVPEJournal of Crystal Growth, 1981
- Electrical and optical properties of N-type Alx Ga1-x as grown by MO-VPEJournal of Electronic Materials, 1981
- AlGaAs grown by metalorganic chemical vapor deposition for visible laserJournal of Applied Physics, 1981
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979
- Epitaxial Deposition of GaAs in the Ga (CH3)3-AsH3-H2‐System (IV) Thermodynamic and Kinetic ConsiderationsCrystal Research and Technology, 1974