Heavy carbon doping in low-pressure metalorganic vapor phase epitaxy of GaAs using trimethylarsenic — a comparison between the carrier gases N2 and H2
- 1 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 440-446
- https://doi.org/10.1016/0022-0248(94)91089-8
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4Applied Physics Letters, 1992
- Carbon doping and etching of MOCVD-grown GaAs, InP, and related ternaries using CC1 4Journal of Crystal Growth, 1991
- Abrupt Mg doping in thin graded base GaAs/GaAlAs heterojunction bipolar transistorsJournal of Applied Physics, 1990
- Heavy carbon doping in metalorganic chemical vapor deposition for GaAs using a low V/III ratioApplied Physics Letters, 1990
- Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structuresApplied Physics Letters, 1990
- Diffusion of Zn and Mg in AlGaAs/GaAs structures grown by metalorganic vapor-phase epitaxyJournal of Applied Physics, 1990
- OMVPE growth of p-AlGaAs/GaAs heterojunctions using diethylberylliumJournal of Electronic Materials, 1989
- Abrupt p-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxyApplied Physics Letters, 1987
- Intentional ρ-type doping by carbon in metalorganic MBE of GaAsJournal of Electronic Materials, 1986
- Heteroepitaxial GaAs on Aluminum OxideJournal of the Electrochemical Society, 1972