OMVPE growth of p-AlGaAs/GaAs heterojunctions using diethylberyllium
- 1 July 1989
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (4) , 501-504
- https://doi.org/10.1007/bf02657779
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- The control and modeling of doping profiles and transients in MOVPE growthJournal of Crystal Growth, 1988
- Characterization of p-type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxyJournal of Applied Physics, 1988
- Controlled carbon doping of GaAs by metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped baseIEEE Electron Device Letters, 1988
- Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement of xApplied Physics Letters, 1987
- An ultra-fast gas delivery system for producing abrupt compositional switching in OMVPEJournal of Crystal Growth, 1986
- An alternative Mg precursor for p-type doping of OMVPE grown materialJournal of Crystal Growth, 1986
- Silicon and beryllium doping of OMVPE grown AlxGa1−xAs (x = 0−0.3) using silane and diethylberylliumJournal of Crystal Growth, 1984
- Cyclotron resonance characterization of ion-implanted carriers in semiconductorsJournal of Vacuum Science and Technology, 1976
- Concerning the purity of magnesium and beryllium alkyls and halides prepared by different methodsJournal of Organometallic Chemistry, 1968