Carbon doping and etching of MOCVD-grown GaAs, InP, and related ternaries using CC1 4
- 1 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 109 (1-4) , 258-263
- https://doi.org/10.1016/0022-0248(91)90187-a
Abstract
No abstract availableKeywords
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