Mechanism of carbon incorporation into GaAs studied using isotopically labeled trimethylarsine
- 2 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 171 (1-2) , 21-26
- https://doi.org/10.1016/s0022-0248(96)00438-1
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Carbon doping in GaAs using trimethylarsine by metalorganic chemical vapor deposition with high-speed rotating susceptorJournal of Crystal Growth, 1995
- Heavy carbon doping in low-pressure metalorganic vapor phase epitaxy of GaAs using trimethylarsenic — a comparison between the carrier gases N2 and H2Journal of Crystal Growth, 1994
- A new model for carbon doping in GaAs — effect of the methyl radicalJournal of Crystal Growth, 1994
- The lattice sites of carbon and hydrogen incorporated in GaAs grown by MOVPE revealed by infrared spectroscopyJournal of Crystal Growth, 1992
- Carbon doping in GaAs grown by MOVPE with trimethylgallium and triethylarsenicJournal of Crystal Growth, 1990
- Metallic p-type GaAs and InGaAs grown by MOMBEJournal of Crystal Growth, 1990
- Carbon-doped GaAs grown by metalorganic vapor phase epitaxy using TMAs and TEGJournal of Crystal Growth, 1990
- Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4Journal of Electronic Materials, 1988
- Abrupt p-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxyApplied Physics Letters, 1987