Carbon-doped GaAs grown by metalorganic vapor phase epitaxy using TMAs and TEG
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 102 (1-2) , 183-186
- https://doi.org/10.1016/0022-0248(90)90900-6
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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