4d- and 5d-transition metal acceptor doping of InP
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 173-176
- https://doi.org/10.1016/s0022-0248(96)00613-6
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Deep-level transient-spectroscopy study of rhodium in indium phosphidePhysical Review B, 1996
- Thermal stability of the midgap acceptor rhodium in indium phosphideApplied Physics Letters, 1995
- Deep levels in hafnium- and zirconium-doped indium phosphidePhysical Review B, 1995
- Novel ways to grow thermally stable semi-insulating InP-based layersJournal of Crystal Growth, 1994
- Redistribution of Fe and Ti implanted into InPJournal of Applied Physics, 1991
- Impurities in Gallium Arsenide and Phosphide: the 4d and 5d SeriesDefect and Diffusion Forum, 1989
- Properties of InP doped with 4d ionsSemiconductor Science and Technology, 1987
- Bound-exciton-related fine structure in charge transfer spectra of InP:Fe detected by calorimetric absorption spectroscopyApplied Physics Letters, 1987
- Redistribution of Fe in thermally annealed semi-insulating InP(Fe): Determination of Fe diffusion coefficient in InPJournal of Applied Physics, 1984
- Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductorsApplied Physics A, 1977