Auger electron spectroscopy depth profiling of Ge/Si multilayers using He+ and Ar+ ions
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 16 (3) , 1091-1095
- https://doi.org/10.1116/1.581238
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Determination of the Ion Sputtering-induced In-depth Distribution by Means of Elastic Peak Electron SpectroscopySurface and Interface Analysis, 1997
- Characterization of sharp interfaces and delta doped layers in semiconductors using secondary ion mass spectrometryAnalytica Chimica Acta, 1994
- Auger Depth Profile Analysis of Deeply Buried InterfacesPhysica Status Solidi (a), 1994
- Atomic mixing, surface roughness and information depth in high‐resolution AES depth profiling of a GaAs/AlAs superlattice structureSurface and Interface Analysis, 1994
- Auger in-depth profiling of Mo–Si multilayersJournal of Vacuum Science & Technology A, 1994
- Growth of Ge/Si Amorphous Superlattices by Dual-Target DC Magnetron SputteringMRS Proceedings, 1992
- Calculations of electorn inelastic mean free paths. II. Data for 27 elements over the 50–2000 eV rangeSurface and Interface Analysis, 1991
- Computer simulations of sputteringNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Three-dimensional distributions of ion range and damage including recoil transportNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Quantitative Analysis by Auger Electron SpectroscopyJapanese Journal of Applied Physics, 1983