Passivation of interface traps in MOS-devices on n- and p-type 6H-SiC
- 31 August 1997
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 6 (10) , 1497-1499
- https://doi.org/10.1016/s0925-9635(97)00049-6
Abstract
No abstract availableKeywords
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