The production of Ci-Oicomplexes during irradiation of Czochralski silicon at 130 K
- 1 October 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (10) , 1047-1051
- https://doi.org/10.1088/0268-1242/3/10/015
Abstract
Samples of silicon grown by the magnetic Czochralski method and containing high concentrations (1018 atom cm-3) of both interstitial oxygen (Oi) and substitutional carbon (Cs) have been irradiated with 2 MeV electrons while they were held at 130 K. Infrared absorption lines associated with Cs-Oi pairs at 588, 640 and 690 cm-1 (carbon modes) and at 1103 cm-1 (oxygen mode) decreased in strength and there was generation of Ci-Oi pair defects (865 cm-1 line). It is concluded that grown-in Cs-Oi pair defects capture mobile self-interstitials and that Cs atoms are ejected into neighbouring interstitial sites.Keywords
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