The selective trapping of self-interstitials by interstitial carbon impurities in electron irradiated silicon
- 1 October 1987
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (10) , 691-694
- https://doi.org/10.1088/0268-1242/2/10/012
Abstract
Float-zone silicon doped with carbon (1.6*1017Cm-3) has been irradiated with 2 MeV electrons below 220 K up to a dose of 1.9*1018 electrons cm-2 leading to a monotonic decrease in the concentration of the substitutional impurity. Interstitial carbon is produced but its concentration saturates and then falls because the defects trap mobile self interstitials. New infrared absorption lines at 966 and 959 cm-1 (77 K) are ascribed to a C1-Sii pair defect which also acts as a nucleation site for agglomeration of Si1 atoms. The latter reactions appear to occur during irradiations at 300 K.Keywords
This publication has 15 references indexed in Scilit:
- New photoluminescence defect spectra in silicon irradiated at 100 K: Observation of interstitial carbon?Solid State Communications, 1987
- Involvement of oxygen-vacancy defects in enhancing oxygen diffusion in siliconApplied Physics Letters, 1986
- Carbon-related radiation damage centres in Czochralski siliconJournal of Physics C: Solid State Physics, 1986
- Electronic and Vibrational Absorption of Interstitial Carbon in SiliconMaterials Science Forum, 1986
- The production and destruction of the C-related 969 meV absorption band in SiSolid State Communications, 1984
- Origin of the 0.97 eV luminescence in irradiated siliconPhysica B+C, 1983
- Carbon interstitial in electron-irradiated siliconSolid State Communications, 1977
- EPR Observation of the Isolated Interstitial Carbon Atom in SiliconPhysical Review Letters, 1976
- Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boronPhysical Review B, 1975
- Irradiation damage in carbon-doped silicon irradiated at low temperatures by 2 MeV electronsRadiation Effects, 1971