Direct-band-gap absorption in germanium under pressure
- 15 June 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (17) , 12921-12924
- https://doi.org/10.1103/physrevb.39.12921
Abstract
The optical absorption of Ge near the direct band gap (→) has been investigated at pressures up to 9 GPa with use of thin samples of 3 and 11 μm thickness. We find a linear blue shift of the gap energy (/dP=0.121 eV/GPa) and an indication for a small increase of the corresponding spin-orbit splitting by 2.4 meV/GPa. The pressure dependence of the band gap predicted by recent ab initio band-structure calculations is in good agreement with the present experimental results. The strength of the absorption at the direct edge is found to increase by a factor of 3 in the pressure range from 0 to 9 GPa.
Keywords
This publication has 23 references indexed in Scilit:
- Effect of pressure on the optical absorption in GaP and P (x=0.36 and 0.5)Physical Review B, 1989
- Pressure dependence of direct and indirect optical absorption in GaAsPhysical Review B, 1987
- Pressure dependence of optical absorption in InP at 77 KPhysica B+C, 1986
- Dependence of the direct and indirect gap of AlSb on hydrostatic pressurePhysical Review B, 1986
- Dependence of the direct energy gap of GaP on hydrostatic pressureSolid State Communications, 1985
- Pressure dependence of shallow bound states in gallium arsenideSolid State Communications, 1985
- VOLUME DEPENDENCE OF OPTICAL TRANSITIONS IN GaAs : PHOTOMODULATED REFLECTIVITYLe Journal de Physique Colloques, 1984
- Effect of hydrostatic pressure on the direct absorption edge of germaniumPhysical Review B, 1977
- Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical BondPhysical Review Letters, 1971
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968