A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 327-330
- https://doi.org/10.1109/iedm.1996.553595
Abstract
In this paper, the impact of oxide nitridation on high field FN-degradation is studied. Nitridation causes a significant decrease of the oxide trap generation and also introduces an additional polarity dependence of the degradation, which can be modelled by taking into account the asymmetry of the nitrogen profile in the oxide. The nitridation effects on trap generation are correlated with changes in the Weibull slope of the Q/sub BD/-distribution.Keywords
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