Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon
- 14 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (7) , 901-903
- https://doi.org/10.1063/1.110990
Abstract
Remote hydrogen plasma exposure is used to study the transport of atomic hydrogen, H 0, through reoxidized‐nitrided oxides and SiO2 and to quantify H 0‐induced degradation of their interfaces with silicon. It is directly demonstrated that (1) H 0 is extremely reactive and produces large numbers of interface states; (2) the transport of H 0 to the silicon/oxide interface is strongly suppressed in reoxidized‐nitrided oxides; and (3) this suppression of the H 0transport is mainly responsible for the much slower interface degradation of reoxidized‐nitrided oxides during high‐field, hot‐electron stress as compared to thermal oxide.Keywords
This publication has 19 references indexed in Scilit:
- Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogenApplied Physics Letters, 1993
- Optimization of Thin Si Oxynitride Films Produced by Rapid Thermal Processing for Applications in EEPROMsJournal of the Electrochemical Society, 1993
- Field and temperature acceleration of time-dependent dielectric breakdown for reoxidized-nitrided and fluorinated oxidesIEEE Electron Device Letters, 1992
- Trapping and trap creation studies on nitrided and reoxidized-nitrided silicon dioxide films on siliconJournal of Applied Physics, 1991
- Temperature dependence of boron neutralization in silicon by atomic hydrogenJournal of Applied Physics, 1990
- Interface and bulk trap generation in metal-oxide-semiconductor capacitorsJournal of Applied Physics, 1990
- Trap creation in silicon dioxide produced by hot electronsJournal of Applied Physics, 1989
- Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processingIEEE Transactions on Electron Devices, 1989
- Generation of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler–Nordheim stressingApplied Physics Letters, 1988
- The constitution of nitrided oxides and reoxidized nitrided oxides on siliconJournal of Applied Physics, 1985