Properties of iron related quenched-in levels in p-silicon
- 16 May 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 95 (1) , 269-278
- https://doi.org/10.1002/pssa.2210950134
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- The origin of iron interstitial in quenched silicon single crystalsPhysica Status Solidi (a), 1982
- Iron donor activity at heat treatment of high resistivity siliconPhysica Status Solidi (a), 1982
- Deep-level optical spectroscopy in GaAsPhysical Review B, 1981
- The solution of iron in siliconJournal of Applied Physics, 1980
- Heat treatment of silicon and the nature of thermally induced donorsJournal of Applied Physics, 1979
- Space-charge spectroscopy in semiconductorsPublished by Springer Nature ,1979
- A quenched-in defect in boron-doped siliconJournal of Applied Physics, 1977
- EPR of a thermally induced defect in siliconApplied Physics Letters, 1977
- Defects in Quenched SiliconPhysica Status Solidi (b), 1969
- Quenched‐in Levels in p‐Type SiliconPhysica Status Solidi (b), 1967