Surface stoichiometry determination of SiOxNy thin films by means of XPS
- 1 July 1994
- journal article
- thin films-and-coatings
- Published by Wiley in Surface and Interface Analysis
- Vol. 22 (1-12) , 190-192
- https://doi.org/10.1002/sia.740220142
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- XPS studies on SiOx thin filmsApplied Surface Science, 1993
- Determination of stoichiometry of SiOx thin films using an Auger parameterThin Solid Films, 1992
- ESCA and SEXAFS investigations of insulating materials for ULSI microelectronicsVacuum, 1990
- Ion assisted deposition of oxynitrides of aluminum and siliconJournal of Vacuum Science & Technology A, 1989
- Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/oxynitride films versus substrate temperatureJournal of Vacuum Science & Technology A, 1989
- Electronic structure and bonding in silicon oxynitride films: An XPS studyApplied Surface Science, 1989
- Photoemission study of(0≤x≤2) alloysPhysical Review B, 1988
- XPS, ESR and resistivity measurements on amorphous silicon oxynitride films (a-SiOxNy) prepared by reactive evaporation of Si in presence of NO2Journal of Non-Crystalline Solids, 1983
- Two-dimensional chemical state plots: a standardized data set for use in identifying chemical states by x-ray photoelectron spectroscopyAnalytical Chemistry, 1979