Hot photoluminescence in beryllium-doped gallium arsenide
- 30 June 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 54 (10) , 845-848
- https://doi.org/10.1016/0038-1098(85)91153-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Intra- and inter-valence-band electronic Raman scattering in heavily doped-GaAsPhysical Review B, 1980
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Cascade Theory of Inelastic Scattering of LightPhysical Review Letters, 1971
- Intrinsic Oscillatory Photoconductivity and the Band Structure of GaAsPhysical Review B, 1971
- Multiple-Phonon Resonant Raman Scattering in CdSPhysical Review Letters, 1969
- Intervalley-Scattering Selection Rules in III-V SemiconductorsPhysical Review B, 1966
- Crystal Dynamics of Gallium ArsenidePhysical Review B, 1963