CW laser annealing of boron implanted polycrystalline silicon
- 30 April 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (4) , 339-344
- https://doi.org/10.1016/0038-1101(85)90094-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Laser-recrystallized polycrystalline silicon resistors for integrated circuit applicationsJournal of Applied Physics, 1983
- A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon filmsIEEE Transactions on Electron Devices, 1983
- CW Laser Annealing of Polycrystalline Silicon on SiO2 and Effects of Successive Furnace AnnealingJapanese Journal of Applied Physics, 1982
- Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidificationApplied Physics Letters, 1981
- Electrical measurements of boron implanted silicon on sapphire and bulk siliconRadiation Effects, 1980
- cw laser anneal of polycrystalline silicon: Crystalline structure, electrical propertiesApplied Physics Letters, 1978