Ellipsometric Measurement of Damage Depth Profiles for Ion Beam Processed Si Surface Layer

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Abstract
The damage depth profiles in ion-implanted or rf sputter-etched Si surface layers have been measured by combining ellipsometric measurement with step removal. The ellipsometric measurements were compared with those of Auger Electron Spectroscopy for the ion-implanted surfaces, and with oxidation Sirtl etching check measurements (OS check) for the rf sputter-etched surfaces. It was found that a damage peak position exists inside the surface layer, e.g. at a depth of about 700 Å for 70 keV phosphorus ion implantation in Si. This position exists at the surface side rather than at the dopant peak position. The change in the refractive index is caused primarily by the change from single crystal to the amorphous (damage) state. It is also verified that the damage region measured ellipsometrically corresponds to the distribution of oxidation-induced stacking faults (OSF) for rf sputter-etched specimens.