Diffusion mediated by doping and radiation-induced point defects
- 1 April 2006
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 376-377, 11-18
- https://doi.org/10.1016/j.physb.2005.12.006
Abstract
No abstract availableKeywords
This publication has 42 references indexed in Scilit:
- Si self-diffusivity using isotopically pure 30Si epitaxial layersMaterials Science and Engineering: B, 2004
- Simultaneous Phosphorus and Si Self-Diffusion in Extrinsic, Isotopically Controlled Silicon HeterostructuresMRS Proceedings, 2004
- Radiation Enhanced Silicon Self-Diffusion and the Silicon Vacancy at High TemperaturesPhysical Review Letters, 2003
- Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer StructuresMRS Proceedings, 2002
- Dopant and Self-Diffusion in Extrinsic n-Type Silicon Isotopically Controlled HeterostructuresMRS Proceedings, 2002
- Diffusion Mechanisms and Intrinsic Point-Defect Properties in SiliconMRS Bulletin, 2000
- Self-Diffusion in Silicon: Similarity between the Properties of Native Point DefectsPhysical Review Letters, 1999
- Silicon Self-Diffusion in Isotope HeterostructuresPhysical Review Letters, 1998
- Self-Diffusion in Isotopically Controlled Heterostructures of Elemental and Compound SemiconductorsMRS Proceedings, 1998
- Correlation factors for diffusion in solidsTransactions of the Faraday Society, 1956