A calibration curve for room-temperature resistivity versus donor atom concentration in Si:As

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Abstract
Neutron activation measurements of arsenic concentration have been made on a set of samples cut from melt-grown crystals of Si:As in the concentration range from 7.8×1018 cm−3 to 1.1×1019 cm−3. Measurements of electrical resistivity at room temperature on the same samples provide information for a calibration curve of resistivity ρ versus the donor concentration nD. The data are combined with earlier measurements of ρ and nD made by Backenstoss using radioactive tracer techniques at lower As concentration to yield a calibration curve covering the donor concentration range from 1.0×1018 cm−3 to 1.1×1019 cm−3. A fourth-order polynomial expression for the function ρ vs nD is compared with data derived from Hall constant determinations of donor concentration. Using the expression relating the Hall constant to the electron density, RH=A(nD)/ne, we are able to obtain values of the function A(nD) for arsenic concentrations in the range 3.0×1018 cm−3 to 8.6×1018 cm−3. These values for Si:As are compared to the A(nD) values for Si:P.