Resistivity Correction Factor for Four-Probe Method on Circular Semiconductors I

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Abstract
A resistivity correction factor is described for a system consisting of a thick, circular semiconductor and a four-probe array. The electric potentials in the interior of the sample were obtained by solving Poisson's equation analytically. Expressions for the resistivity correction factor are presented for three cases of the probe position. The resistivity correction factors of a circular sheet, calculated by the present method, coincides with that obtained from the conformal transformation method. Numerical evaluations were carried out as a function of the thickness and radius of the sample and the spacing and position of the probe array.