A new temperature-dependent magneto-conductance in a disordered electron gas
- 20 May 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (14) , L383-L392
- https://doi.org/10.1088/0022-3719/18/14/006
Abstract
Using long-channel GaAs MESFET structures doped in excess of the Mott criterion, the authors have measured the inelastic length in a 2DEG by two methods, the parallel and perpendicular magnetoresistance. The low-field data were fitted using the theories of Altshuler and Aronov (1981) and of Hikami et al. (1980). The two techniques were found to give good agreement. However, high parallel magnetic field data show a conductivity correction going as delta sigma approximately=B12/ln T, a result not predicted by existing theories. The authors present a model for this effect which gives good agreement with experiment.Keywords
This publication has 12 references indexed in Scilit:
- Physical interpretation of weak localization: A time-of-flight experiment with conduction electronsPhysical Review B, 1983
- Electron-electron scattering in silicon inversion layersJournal of Physics C: Solid State Physics, 1983
- Magneto-resistance oscillations and the transition from three-dimensional to two-dimensional conduction in a gallium arsenide field effect transistor at low temperaturesJournal of Physics C: Solid State Physics, 1982
- A self-consistent treatment of Anderson localizationSolid State Communications, 1981
- Localisation in disordered two-dimensional systems and the universal dependence on diffusion lengthJournal of Physics C: Solid State Physics, 1981
- Diffusion and logarithmic corrections to the conductivity of a disordered non-interacting 2D electron gas: power law localisationJournal of Physics C: Solid State Physics, 1981
- Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random SystemProgress of Theoretical Physics, 1980
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979
- A metal-insulator transition in the impurity band of n-type GaAs induced by loss of dimensionJournal of Physics C: Solid State Physics, 1977
- The Anderson transition in silicon inversion layers: the origin of the random field and the effect of substrate biasProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1977