Body contacts in InP-based InAlAs/InGaAs HEMTs andtheir effects on breakdown voltage and kink suppression
- 27 April 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (9) , 758-759
- https://doi.org/10.1049/el:19950496
Abstract
The authors investigate the effects of body contacts in InP-based In0.52Al0.48As/In0.53Ga0.47As HEMTs. A body contact connecting a floating InAlAs buffer to an ohmic electrode is formed by a buried p-layer and the Zn-diffused p+-region in the electrode. The body contact successfully prevents holes generated by impact ionisation from accumulating in the channel, resulting in higher breakdown voltage and kink-free I/V characteristics.Keywords
This publication has 7 references indexed in Scilit:
- Impact ionization in InAlAs/InGaAs HFET'sIEEE Electron Device Letters, 1994
- 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel EffectsJapanese Journal of Applied Physics, 1994
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- A novel body contact for SIMOX based SOI MOSFETsSolid-State Electronics, 1991
- Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETsIEEE Electron Device Letters, 1988
- Simplified analysis of body-contact effect for MOSFET/SOIIEEE Transactions on Electron Devices, 1988
- Properties of ESFI MOS transistors due to the floating substrate and the finite volumeIEEE Transactions on Electron Devices, 1975