Oxide removal from the GaSb surface and fabrication of MBE GaSb photodiodes and Au–GaSb schottky diodes
- 14 September 1994
- journal article
- Published by Wiley in Advanced Materials for Optics and Electronics
- Vol. 4 (5) , 319-325
- https://doi.org/10.1002/amo.860040502
Abstract
Oxide removal from GaSb surfaces by several wet chemical treatments and subsequent thermal annealing was investigated. Preferable wet chemical treatments by which surface oxides could be removed effectively at room temperature were evaluated in the experiments. This method can be effectively applied to fabrication processing of MBE GaSb photodoides and Au–GaSb Schottky doides. Low‐reverse‐leakage GaSb photodiodes and near ideal Au–GaSb Schottky diodes were thus obtianed.Keywords
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