Nonoverlapping dual-gate bucket-brigade devices
- 15 February 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (4) , 329-331
- https://doi.org/10.1063/1.91481
Abstract
A novel bucket‐brigade charge‐transfer device concept is presented and experimentally verified. The dual‐gate BBD exhibits operational performances comparable to surface‐channel charge‐coupled devices, while still enjoying fabrication simplicity and high yield. The concept is implemented using conventional p‐channel aluminum‐gate technology with only an additional shadowed‐gap lift‐off process which produces self‐aligned bias‐gate electrodes separated from the adjacent clock buses by submicron (typically 0.5 μm) spacings. Transfer inefficiencies below 10−4 at 100 kHz and around 5×10−4 at 1 MHz have been currently observed, despite the low carrier mobility (140 cm2/V s).Keywords
This publication has 3 references indexed in Scilit:
- A nonoverlapping gate charge-coupling technology for serial memory and signal processing applicationsIEEE Journal of Solid-State Circuits, 1976
- Charge Coupled Semiconductor DevicesBell System Technical Journal, 1970
- Bucket-brigade electronics: new possibilities for delay, time-axis conversion, and scanningIEEE Journal of Solid-State Circuits, 1969