Evaluation of density of states distribution in amorphous silicon films by photoconductivity measurements
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 90 (1) , 123-126
- https://doi.org/10.1016/s0022-3093(87)80396-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Intensity and Temperature Dependence of Steady-State Photoconductivity Down to 8 K and DOS Distribution Obtained from These Measurements in a-Si:HPhysica Status Solidi (a), 1984
- Steady-state photoconductivity and recombination process in sputtered hydrogenated amorphous siliconPhysical Review B, 1984
- Comparison of the density of gap states in a-Si:H found by different methodsJournal of Non-Crystalline Solids, 1983
- Photoconductivity in amorphous Si:H:Cl filmsJournal of Applied Physics, 1983
- R.f. plasma deposition of amorphous silicon films from SiCl4-H2Thin Solid Films, 1980
- Drift mobility studies in vitreous arsenic triselenidePhilosophical Magazine, 1971