Photoconductivity in amorphous Si:H:Cl films

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Abstract
Amorphous silicon films were deposited in a capacitively coupled glow discharge in SiCl4-H2 mixture. The photoconductivity has been correlated to the discharge pressure p, the substrate temperature Ts , and to the ratio R of SiCl4 flow to the total flow. Moreover, the dependence of the photoconductivity on the wavelength and light intensity has been investigated. These measurements give useful information about the recombination mechanisms and allow one to estimate the position of the Fermi level. Some features of the gap state distribution are obtained by correlating dark conductivity and luminescence results to the photoconductivity ones.