Determination of the MOS oxide capacitance

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Abstract
A simple and explicit formula is derived to give the oxide capacitance from MOS C‐V data in the accumulation but nondegenerate range of surface potential. The effect of majority impurity deionization is shown to be unimportant due to a higher surface concentration of majority carriers than impurities in the accumulation range. A first‐order correction is obtained to take into account the degenerate or Fermi statistics of the majority‐carrier surface concentration for oxide capacitance determinations from C‐V data in the strong accumulation and degenerate range of surface potentials.