Generation-recombination processes and Auger suppression in small-bandgap detectors
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4) , 840-848
- https://doi.org/10.1016/0022-0248(90)90813-z
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Non-equilibrium modes of operation for infrared detectorsInfrared Physics, 1986
- Nonequilibrium devices for infra-red detectionElectronics Letters, 1985
- Recombination in a graded n-n+contact region in a narrow-gap semiconductorJournal of Physics C: Solid State Physics, 1984
- Hg vacancy related lifetime in Hg0.68Cd0.32Te by optical modulation spectroscopyApplied Physics Letters, 1983
- Common anion heterojunctions: CdTe-CdHgTeSolid-State Electronics, 1983
- Diffusion-limited lifetime in semiconductorsPhysical Review B, 1981
- The influence of surface properties on minority carrier lifetime and sheet conductance in semiconductorsJournal of Physics D: Applied Physics, 1981
- Interface-recombination-controlled minority-carrier lifetime in n -type gapElectronics Letters, 1977
- Quantum efficiency in InSbJournal of Physics and Chemistry of Solids, 1962
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952