Anisotropy analysis of the surface energy of diamond cubic crystals
- 6 October 2003
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 35 (10) , 805-809
- https://doi.org/10.1002/sia.1605
Abstract
The surface energies for 24 surfaces of diamond structure cubic crystals of C, Si and Ge have been calculated using the modified embedded‐atom method. The results show that the three lowest surface energies correspond to the (111), (211) and (433) surfaces. Considering surface energy minimization solely, the (111), (211) and (433) textures should be favourable successively in diamond cubic films. The appearance of abnormal grains or textures with (111) and (211) orientations in Si, Ge and C films results from surface energy minimization. Copyright © 2003 John Wiley & Sons, Ltd.Keywords
This publication has 39 references indexed in Scilit:
- Strain-energy-driven abnormal grain growth in copper films on silicon substratesJournal of Crystal Growth, 2001
- Theoretical analysis of abnormal grain growth in HCP-polycrystalline thin films on rigid substratesProgress in Crystal Growth and Characterization of Materials, 2000
- Abnormal grain growth in aluminum alloy thin filmsJournal of Applied Physics, 1991
- Self-diffusion and impurity diffusion of fee metals using the five-frequency model and the Embedded Atom MethodJournal of Materials Research, 1989
- Simulation of Au(100) reconstruction by use of the embedded-atom methodPhysical Review B, 1987
- Surface-energy-driven secondary grain growth in thin Au filmsApplied Physics Letters, 1986
- Surface-energy-driven secondary grain growth in ultrathin (<100 nm) films of siliconApplied Physics Letters, 1984
- Abnormal Grain Growth in Ultra-Thin Films of Germanium on InsulatorMRS Proceedings, 1983
- Quasiatoms: An approach to atoms in nonuniform electronic systemsPhysical Review B, 1980
- Effective-medium theory of chemical binding: Application to chemisorptionPhysical Review B, 1980