The frequency behavior of InGaAs-AlInAs metal-semiconductor-metal photodetectors at low bias voltages for data communication applications
- 1 February 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (2) , 163-166
- https://doi.org/10.1109/68.122349
Abstract
The authors have fabricated lattice matched InGaAs/AlInAs metal-semiconductor-metal photodetectors on InP. The detectors have very low dark currents, low capacitance, and good responsivity, corresponding to at least 95% internal collection efficiency. It is demonstrated that multigigahertz bandwidths, as measured in the frequency domain, are achievable at typical logic-level bias voltages, and that therefore these detectors are viable candidates for long-wavelength data communication applications.Keywords
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