Epitaktische Abscheidung von GaAs im System Ga(CH₃)₃-AsH₃-H₂ (I) Autoepitaktische Abscheidung

This publication has 18 references indexed in Scilit:

• Röntgenographische Untersuchungen zur Kristallperfektion von GaAs‐Einkristallen und ‐Epitaxieschichten. Will Kleber zum Gedenken
  Crystal Research and Technology, 1972
• Heteroepitaxial GaAs on aluminum oxide. I: Early growth studies
  Metallurgical Transactions, 1970
• The Use of Metal-Organics in the Preparation of Semiconductor Materials
  Journal of the Electrochemical Society, 1969
• Dislocation Etch Pits in Single Crystal GaAs
  Physica Status Solidi (b), 1969
• Arseniure de gallium de haute mobilite obtenu par epitaxie en phase liquide
  Materials Research Bulletin, 1968
• Oriented Growth of Semiconductors. V. Surface Features and Twins in Epitaxial Gallium Arsenide
  Journal of Applied Physics, 1967
• Preparation of high purity epitaxial gallium arsenide from the elements
  Solid-State Electronics, 1967
• Electrical Properties of n‐Type Epitaxial Gallium Arsenide
  Physica Status Solidi (b), 1966
• Polarity effects in III–V semiconducting compounds
  Journal of Physics and Chemistry of Solids, 1965
• Oriented growth of semiconductors I. Orientations in gallium arsenide grown epitaxially on germanium
  Philosophical Magazine, 1965