20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate
- 1 June 2007
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 46 (6L) , L587
- https://doi.org/10.1143/jjap.46.l587
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) on Si Substrates for Large-Current OperationJapanese Journal of Applied Physics, 2004
- Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxyApplied Physics Letters, 1999
- Thermal stability of GaN on (1 1 1) Si substrateJournal of Crystal Growth, 1998