Improved LPE techniques for low threshold lasers at 1.55 μm in the quaternary In-Ga-As-P/InP system
- 30 June 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 58 (1) , 236-242
- https://doi.org/10.1016/0022-0248(82)90231-7
Abstract
No abstract availableKeywords
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