High single-mode power conversion efficiency vertical-cavity top-surface-emitting lasers
- 1 September 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (9) , 972-975
- https://doi.org/10.1109/68.257162
Abstract
We report advances in the power conversion (wall-plug) efficiency of vertical-cavity top-surface-emitting lasers. The devices were fabricated from molecular beam epitaxial layers using deep proton implants to define gain-guided lasers. The epitaxial structure included low resistance, piecewise linearly graded n-type and p-type mirrors, a triple In/sub 0.2/Ga/sub 0.8/As quantum-well active region, and a delta-doped contact layer. Power conversion efficiencies as high as 12.7% for continuous-wave single-mode operation were measured after several hours of device operation.Keywords
This publication has 11 references indexed in Scilit:
- Electrically injected visible (639–661 nm) vertical cavity surface emitting lasersElectronics Letters, 1993
- Low resistance wavelength-reproducible p-type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxyApplied Physics Letters, 1993
- Low threshold voltage vertical cavity surface-emitting laserElectronics Letters, 1993
- Method for accurate growth of vertical-cavity surface-emitting lasersApplied Physics Letters, 1993
- High electronic-optical conversion efficiency in a vertical-to-surface transmission electro-photonic device with a vertical cavityIEEE Photonics Technology Letters, 1993
- High wallplug efficiency vertical-cavity surface-emitting lasers using lower barrier DBR mirrorsElectronics Letters, 1993
- Spreading resistance in proton-implanted vertical-cavity surface-emitting diode lasersApplied Physics Letters, 1992
- On-axis far-field emission from two-dimensional phase-locked vertical cavity surface-emitting laser arrays with an integrated phase-correctorApplied Physics Letters, 1992
- High reliability, high power, single mode laser diodesElectronics Letters, 1990
- Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μmElectronics Letters, 1990