High electronic-optical conversion efficiency in a vertical-to-surface transmission electro-photonic device with a vertical cavity
- 1 February 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (2) , 136-139
- https://doi.org/10.1109/68.195982
Abstract
Electronic-optical conversion efficiency of 11.4% in a vertical-to-surface-transmission electrophotonic device with a vertical cavity is reported. Reduction of the electrical resistance by the double mesa structure, efficient confinement of carriers in the active region by the proton implanted structure, and photon recycling by sidewall reflectors lead to this high conversion efficiency. Efficiency over 10% is achieved for the first time in surface-emitting devices.Keywords
This publication has 21 references indexed in Scilit:
- Threshold and Modulation Characteristics of Photon-Recycled Semiconductor LasersJapanese Journal of Applied Physics, 1992
- Near-infrared high-gain strained layer InGaAs heterojunction phototransistors: Resonant periodic absorptionApplied Physics Letters, 1991
- Detector Characteristics of a Vertical-Cavity Surface-Emitting LaserJapanese Journal of Applied Physics, 1991
- Intensity noise and polarization stability of GaAlAs-GaAs surface emitting lasersIEEE Journal of Quantum Electronics, 1991
- Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasersIEEE Journal of Quantum Electronics, 1991
- Thermal properties of etched-well surface-emitting semiconductor lasersIEEE Journal of Quantum Electronics, 1991
- GaAs buried heterostructure vertical cavity top-surface emitting lasersIEEE Journal of Quantum Electronics, 1991
- Picosecond dynamics of optical gain switching in vertical cavity emitting lasersIEEE Journal of Quantum Electronics, 1991
- Resonant cavity-enhanced (RCE) photodetectorsIEEE Journal of Quantum Electronics, 1991
- Photon recycling in semiconductor lasersJournal of Applied Physics, 1974