Ga-As intermixing in GaAs(001) reconstructions
- 15 August 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (8) , 5282-5288
- https://doi.org/10.1103/physrevb.48.5282
Abstract
Using high-resolution medium-energy ion scattering, we have determined the surface As and Ga coverages of the c(4×4), c(2×8), (2×4), (2×6), and c(8×2) reconstructions of GaAs(001). All surfaces are more Ga rich than predicted by current structural models. The results are explained in terms of charge neutrality and Coulomb repulsion between As lone-pair orbitals, leading to As replacement by Ga in the first and second surface layers.Keywords
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