Interfacial structure of ICB epitaxially deposited Al(110) bicrystal films on Si(100) substrates
- 1 January 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 41-42, 253-256
- https://doi.org/10.1016/0169-4332(89)90065-2
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- The use of heteroepitaxy in the fabrication of bicrystals for the study of grain boundary structureScripta Metallurgica, 1988
- Observation of Initial Stage of Al Epitaxial Growth on Si(111) by Ionized Cluster Beam DepositionJapanese Journal of Applied Physics, 1985
- Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beamJournal of Applied Physics, 1984
- Epitaxy of Aluminium Films on Semiconductors by Ionized Cluster BeamMRS Proceedings, 1984