Photoconductivity in solution-grown copper-doped GaP
- 1 December 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (12) , 5307-5311
- https://doi.org/10.1063/1.1663235
Abstract
High-resistivity copper-doped GaP has been prepared by solution growth from a copper-doped gallium melt. Photoconductive effects have been studied in these crystals. Compared to previously reported results these crystals are characterized by (i) high sensitivity at lower light levels, (ii) faster response time, and (iii) extended short-wavelength spectral response.This publication has 20 references indexed in Scilit:
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