Scanning Tunneling Microscopy of Ga0.47In0.53As/InP Multiquantum Well Structures in Air
- 1 June 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (6R)
- https://doi.org/10.1143/jjap.28.1050
Abstract
Scanning tunneling microscope (STM) images of Ga0.47In0.53As/InP multiquantum well (MQW) structures in air showed a corrugated pattern. This corrugation turned out to be not geometrical but rather to arise from a difference in tunneling conductance between the GaInAs and the InP layers. The amplitude of the corrugations was affected by various factors such as contamination and atmospheric humidity.Keywords
This publication has 11 references indexed in Scilit:
- Low-threshold, high-power, single-longitudinal-mode operation in 1.5μm multiple-quantum-well, distributed-feedback laser diodesElectronics Letters, 1988
- Large electroabsorption effect in GainAs/InP multiple quantum well (MQW) optical modulator grown by OMVPEElectronics Letters, 1988
- Observation of Ga0.47In0.53As/InP Multiquantum Well Structure in Air by Scanning Tunneling MicroscopeJapanese Journal of Applied Physics, 1988
- High-speed GaInAs/InP multiquantum well avalanche photodiodes grown by atmospheric-pressure MOCVDElectronics Letters, 1988
- Scanning tunneling microscopy and potentiometry on a semiconductor heterojunctionApplied Physics Letters, 1987
- Contamination-mediated deformation of graphite by the scanning tunneling microscopePhysical Review B, 1986
- Properties of vacuum tunneling currents: Anomalous barrier heightsIBM Journal of Research and Development, 1986
- Gain and intervalence band absorption in quantum-well lasersIEEE Journal of Quantum Electronics, 1984
- 1.5–1.6-μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1983
- Analytic approximations for the Fermi energy of an ideal Fermi gasApplied Physics Letters, 1977