The chemical diffusion of P in Si
- 16 August 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 30 (2) , K139-K142
- https://doi.org/10.1002/pssa.2210300251
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Self‐ and impurity diffusion in Ge and SiPhysica Status Solidi (b), 1975
- The Confirmation of the Surface Effect upon Phosphorus Diffusion into SiliconJapanese Journal of Applied Physics, 1974
- Excess vacancy generation mechanism at phosphorus diffusion into siliconJournal of Applied Physics, 1974
- On the nature of the kink in the carrier profile for phosphorus-diffused layers in siliconApplied Physics Letters, 1972
- Diffusion of Phosphorus into Silicon and the Masking Action of Silicon-Dioxide FilmsPublished by Springer Nature ,1967
- Diffusion of Phosphorus into SiliconJournal of the Physics Society Japan, 1962
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954