Temperature dependence of low-frequency electrical noise in silicon resistors (in field effect devices)
- 14 March 1981
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 14 (3) , 471-490
- https://doi.org/10.1088/0022-3727/14/3/017
Abstract
Excess and 1/f noise intensity has been measured between 80K and 380K in uniform cross-section silicon resistors with various geometries and surface conditions. It can be analysed as a fluctuating conductance proportional to (mobility)2, that is a carrier number fluctuation independent of temperature.Keywords
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